2SC1213 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for low frequency amplifier applications. pinning 1 = emitter 2 = collector 3 = base to-92 dimensions in inches and (millimeters) .022(0.56).014(0.36) .050 (1.27) .148(3.76).132(3.36) typ .190(4.83).170(4.33) .100 (2.54) typ .050 (1.27) typ .022(0.56).014(0.36) .190(4.83).170(4.33) .500 (12.70) min 2o typ 5o typ. 2o typ 3 2 1 5o typ. characteristic symbol rating unit collector-base voltage vcbo 50 v collector-emitter voltage vceo 50 v emitter-base voltage vebo 4 v collector current ic 500 ma total power dissipation pd 400 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) rank b c d range 60~120 100~200 160~320 classification of hfe1 characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 50 - - v ic=100ma, ie=0 collector-emitter breakdown voltage bvceo 50 - - v ic=1ma, ib=0 emitter-base breakdown volatge bvebo 4 - - v ie=10ma, ic=0 collector cutoff current icbo - - 0.5 ma vcb =20v, ie=0 emitter cutoff current iebo - - 0.5 ma veb =5v, ic=0 collector-emitter saturation voltage (1) vce(sat) - - 0.6 v ic=150ma, ib=15ma base-emitter saturation voltage (1) vbe(sat) - - 1.2 v ic=150ma, ib=15ma dc current gain(1) hfe1 60 - 320 - ic=10ma, vce=3v hfe2 35 - - - ic=500ma, vce=3v transition frequency ft 100 160 - mhz ic=20ma, vce =6v electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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